MTP10N10E |
RFQ for MTP10N10E |
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| Product | Manufacturers | Pack | D/C |
| MTP10N10E | - | TO-220 | 04+ |
Features |
| • Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode - Unclamped Inductive Switching (UIS) Energy Capability Specified at 100°C• Commutating Safe Operating Area (CSOA) Specified for Use in Half and Full Bridge Circuits• SourcetoDrain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode• Diode is Characterized for Use in Bridge Circuits |
|
Rating |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
100 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
100 |
Vdc |
| GatetoSource Voltage |
VGS |
± 20 |
Vdc |
| Drain Current - Continuous - Pulsed |
ID IDM |
10 5 |
Adc |
| Total Power Dissipation Derate above 25°C |
PD |
75 0.6 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
65 to 150 |
°C |